Method for Producing an Optoelectronic Semiconductor Chip

ABSTRACT

A method for producing an optoelectronic semiconductor chip is disclosed. A semiconductor body has a pixel area, which has at least two different subpixel areas. An electrically conductive layer is applied to the radiation outlet surface of at least one subpixel area. The electrically conductive layer is designed to at least partially salify with a protic reaction partner. A conversion layer is deposited onto the electrically conductive layer by means of a electrophoresis process.

This patent application is a national phase filing under section 371 ofPCT/EP2014/067098, filed Aug. 8, 2014, which claims the priority ofGerman patent application 10 2013 109 031.1, filed Aug. 21, 2013, eachof which is incorporated herein by reference in its entirety.

TECHNICAL FIELD

A method is provided for producing an optoelectronic semiconductor chip.

BACKGROUND

A method involves depositing a conversion layer electrophoretically on asemiconductor body. A method for applying a conversion layer isdescribed, for example, in the paper by C. R. Belton et al., J. Phys.D.: Appl. Phys. 41, 094006 (2008).

SUMMARY

In the present case, embodiments provide a method that makes it possibleto apply a conversion layer to comparatively small subpixel regions toproduce different colors.

In the method for producing a semiconductor chip, a semiconductor bodywith a pixel region is provided. The pixel region comprises at least twodifferent subpixel regions. The subpixel regions are preferablyelectrically insulated from one another. Each subpixel region preferablycomprises an active layer, which is suitable for emittingelectromagnetic radiation of a first wavelength range when thesemiconductor body is in operation. The first wavelength rangeparticularly preferably comprises blue light or is formed from bluelight.

The subpixel regions, for example, have a side length of at most 150micrometers. The subpixel regions may be separated from one another, forexample, by trenches. The subpixel regions are, for example, arranged ata distance from one another. For example, the distance between twodirectly adjacent subpixel regions has a value which is no greater than10 micrometers.

Furthermore, an electrically conductive layer is applied to theradiation exit face of at least one subpixel region. The electricallyconductive layer is suitable at least in part for forming a salt with aprotic reactant.

Particularly preferably, the electrically conductive layer comprises ametal, a metal alloy, a semimetal or a semiconductor material or isformed of a metal, a semimetal or a semiconductor material. For example,the electrically conductive layer comprises one of the followingmaterials or is formed of one of the following materials: lithium,sodium, potassium, rubidium, caesium, beryllium, calcium, magnesium,strontium, barium, scandium, titanium, aluminum, silicon, gallium, tin,zirconium, zinc oxide, zinc sulfide, zinc selenide, zinc telluride ortin oxide.

The electrically conductive layer particularly preferably has athickness of between 20 nanometers and 20 micrometers inclusive. Forexample, the electrically conductive layer has a thickness of between 20nanometers and 300 nanometers inclusive. Particularly preferably, theelectrically conductive layer has a thickness of between 20 nanometersand 100 nanometers inclusive.

The electrical layer preferably has an electrical conductivity of atleast 1 Siemens/meter. The conductivity of the electrically conductivelayer may also be increased by doping. Such electrical conductivityadvantageously allows sufficient charge transport even withcomparatively thin electrically conductive layers, which have athickness for instance of between 20 nanometers and 300 nanometersinclusive or between 20 nanometers and 100 nanometers inclusive.

The electrically conductive layer may, for example, be deposited bythermal vapor deposition or sputtering.

A conversion layer is deposited on the electrically conductive layer byan electrophoresis process. The conversion layer is suitable forconverting electromagnetic radiation of the first wavelength range intoradiation of a second wavelength range. In other words, the conversionlayer is configured to convert wavelengths.

The phrase “to convert wavelengths” is here in particular intended tomean that irradiated electromagnetic radiation of a given wavelengthrange is converted into electromagnetic radiation of another, preferablylonger-wave, wavelength range. As a rule, a wavelength-convertingelement absorbs electromagnetic radiation of an irradiated wavelengthrange, converts it by electronic processes at atomic and/or molecularlevel into electromagnetic radiation of another wavelength range andre-emits the converted electromagnetic radiation.

The conversion layer generally comprises particles of a luminescentmaterial, which lend the conversion layer the wavelength-convertingproperties.

One of the following materials is, for example, suitable for theluminescent material particles: rare earth metal-doped garnets, rareearth metal-doped alkaline earth sulfides, rare earth metal-dopedthiogallates, rare earth metal-doped aluminates, rare earth metal-dopedsilicates, rare earth metal-doped orthosilicates, rare earth metal-dopedchlorosilicates, rare earth metal-doped alkaline earth silicon nitrides,rare earth metal-doped oxynitrides, rare earth metal-doped aluminumoxynitrides, rare earth metal-doped silicon nitrides or rare earthmetal-doped sialons.

Comparatively small luminescent material particles are particularlypreferably used in the present method to coat the comparatively smallsubpixel regions. Particularly preferably, the diameter of theluminescent material particles does not exceed a value of 5 micrometers.

In an electrophoresis process the particles, for example, of theluminescent material, to be applied are accelerated by an electricalfield, such that a layer of these particles is deposited on a surfaceprovided. In general, the surface to be coated is provided in anelectrophoresis bath, which contains the particles intended to form theconversion layer. In the electrophoresis process, the particles aredeposited only on the parts of the surface which are electricallyconductive. The particles are generally differently deposited dependingon the electrical conductivity of these regions.

One concept of the present invention is to apply an electricallyconductive layer to the surface to be coated and thus always to providean identical surface for electrophoretic deposition.

One method for depositing an electrophoretic layer is described, forexample, in document DE 102012105691.9, the disclosure content of whichis hereby included by reference.

In a particularly preferred embodiment of the method, the electricallyconductive layer is substantially chemically inert relative to anorganic solvent of the electrophoresis bath. The term “chemically inert”should here be understood to mean that the electrically conductive layerdoes not undergo any significant chemical reaction with the organicsolvent, wherein in reality a slight chemical reaction between twomaterials cannot as a rule be wholly ruled out.

For example, the electrophoresis bath contains as organic solvent one ofthe following substances: alcohol, ketone, aromatic or aldehyde.

According to one embodiment of the method, the luminescent materialparticles of the conversion layer, which is produced by electrophoresis,are fixed by a bonding agent after the electrophoresis process. Thebonding agent may, for example, comprise a silicone or an epoxide or amixture of these materials. Other suitable materials or coatings mayalso be used as the bonding agent.

According to one embodiment, each subpixel region comprises a radiationexit face, which is electrically conductive. For example, the radiationexit face of each subpixel region is here formed by a transparentelectrically conductive layer. The transparent electrically conductivelayer is particularly preferably formed by a TCO material or comprises aTCO material (“TCO”=transparent conductive oxide).

Transparent conductive oxides are as a rule metal oxides, such as, forexample, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indiumoxide or indium-tin oxide (ITO). In addition to binary metal-oxygencompounds, such as, for example, ZnO, SnO₂ or In₂O₃, ternarymetal-oxygen compounds, such as, for example, Zn₂SnO₄, ZnSnO₃, MgIn₂O₄,GaInO₃, Zn₂In₂O₅ or In₄Sn₃O₁₂ or mixtures of different transparentconductive oxides also belong to the TCO group. Furthermore, TCOs do notnecessarily correspond to a stoichiometric composition and may moreoveralso be p- as well as n-doped.

An electrically conductive layer is then applied to the radiation exitface of at least one subpixel region, wherein the radiation exit face ofa further subpixel region is free of the electrically conductive layer.

According to one embodiment of the method, in electrophoretic depositionof the conversion layer the subpixel region onto which the conversionlayer is applied is energized independently of the other subpixelregions. In this way, the conversion layer may be applied locally onlyon the precise subpixel region being energized, while the other subpixelregions to which current is not supplied remain free of the conversionlayer.

If the subpixel regions may be individually energized at the time ofdeposition of the conversion layer and if the radiation exit facethereof is electrically conductive, it is particularly simple to providethe semiconductor body with a conversion layer and in particular it isparticularly simple to provide different subpixel regions with differentconversion layers.

If the radiation exit faces of each subpixel region are electricallyconductive and if it is not possible or is possible only with difficultyto supply the subpixel regions individually with current, then accordingto a further embodiment of the method the electrically conductive layeris applied over the entire surface of the front of the semiconductorbody. A photoresist layer is then applied onto the electricallyconductive layer in at least one subpixel region, while the electricallyconductive layer in a further subpixel region is freely accessible. Theelectrophoresis process is then performed and the conversion layerdeposited as a rule over the entire surface. To this end, theelectrically conductive layer is preferably in each case electricallycontacted laterally. Since the photoresist layer comprises anelectrically insulating surface, in the electrophoresis process theluminescent material particles are deposited only on the regions of theelectrically conductive layer which are freely accessible. Aftercompletion of the electrophoresis process the photoresist layer isremoved again.

It is then possible once again to apply a photoresist layer, leaving theelectrically conductive layer of another subpixel region free. In asubsequent electrophoresis process, a further conversion layer is thendeposited on the freely accessible electrical layer. The furtherconversion layer is in this case preferably suitable for convertingelectromagnetic radiation of the first wavelength range intoelectromagnetic radiation of a third wavelength range different from thefirst and second wavelength ranges.

It is moreover also possible for the surface of the subpixel regions ofthe semiconductor body firstly to be formed by a passivation layer. Thepassivation layer is, for example, electrically insulating and providedto protect the semiconductor body from external influences. For example,the passivation layer is formed from an oxide or a nitride or comprisesone of these materials. As a rule, the passivation layer is applied overthe entire surface of a front of the semiconductor body. The front ofthe semiconductor body here comprises the radiation exit faces of thesubpixel regions.

According to one embodiment of the method, an electrically conductiveradiation exit face is provided by removing the passivation layer whichhas been applied to the subpixel region.

Furthermore, it is also possible for the passivation layer to remain onthe front of the semiconductor body and thus on the radiation exit facesof the subpixel regions. In this embodiment of the method, theelectrically conductive layer is applied to the entire surface of thefront of the semiconductor body. In a next step, a photoresist layer isapplied to the electrically conductive layer in at least one subpixelregion, while the electrically conductive layer is freely accessible ina further subpixel region.

Particularly preferably, an electrically conductive layer applied overthe entire surface is electrically contacted laterally during theelectrophoresis process.

If a semiconductor body is provided in which the radiation exit face ofeach subpixel region is formed by a passivation layer, the passivationlayer may also be removed from the radiation exit face of the subpixelregion, such that the radiation exit face is made electricallyconductive, while the passivation layer is retained on the radiationexit face of at least one subpixel region. The electrically conductivelayer is then applied onto the electrically conductive radiation exitface, while the radiation exit faces of the subpixel regions, which areformed by passivation, remain free of the electrically conductive layer.The conversion layer is then applied onto the electrically conductivelayer using an electrophoresis process.

The conversion layer is in this case applied only onto the regions fromwhich passivation has been previously removed, the rest of the surfaceremaining free of the conversion layer, since the latter is notelectrically conductive.

In this embodiment of the method, the steps described in the aboveparagraph for applying a further conversion layer onto a furthersubpixel region are preferably repeated. To this end, the passivationlayer is removed in the region of the radiation exit face of a furthersubpixel region and the electrically conductive layer is applied to thisexposed region. The further conversion layer is then applied onto theelectrically conductive layer using a further electrophoresis process.The further conversion layer is in this case suitable for convertingelectromagnetic radiation of the first wavelength range intoelectromagnetic radiation of a third wavelength range different from thefirst and second wavelength ranges.

Each pixel region preferably comprises precisely three subpixel regions.For example, one of the three subpixel regions is provided to emit greenlight, while a further subpixel region is provided to produce red lightand the third subpixel region is intended to emit blue light. If thefirst wavelength range for example comprises blue light, one subpixelregion is in this case particularly preferably free of a conversionlayer. A further subpixel region preferably comprises a conversion layerwhich is suitable for converting electromagnetic radiation of the first,blue wavelength range into electromagnetic radiation of a secondwavelength range, wherein the second wavelength range preferablycomprises green light or consists of green light. The third subpixelregion preferably comprises a further conversion layer which is suitablefor converting blue radiation of the first wavelength range intoradiation of a third wavelength range which particularly preferablycomprises red light or consists of red light.

The conversion layer is particularly preferably configured such that itconverts radiation of the first wavelength range as completely aspossible into radiation of the second or third wavelength range.

According to one embodiment of the method, the electrically conductivelayer is introduced into the protic reactant after the electrophoresisprocess, such that the electrically conductive layer at least in partforms a salt with the protic reactant. This offers the advantage that anelectrically conductive layer converted at least in part into a salt isgenerally more transmissive for visible light than the electricallyconductive layer itself. If the electrically conductive layer is thusapplied on a radiation exit face, it has only a slightly preventiveeffect on light outcoupling from the radiation exit face afterconversion into a salt. It is furthermore also possible to wash the saltas completely as possible back out of the finished component.

According to one embodiment of the method, the salt is washed at leastin part out of the semiconductor chip.

In this case, the salt is particularly preferably removed from thesurface of the semiconductor body.

The material M of the electrically conductive layer is in this casereacted generally as follows with a protic reactant of the generalformula ROH:

M+ROH—>4M(OR)+H₂

If the electrically conductive layer for example comprises aluminum, thealuminum forms a salt as follows with water as the protic reactant:

2Al+6H₂O—>2AL (OH)₃+2H₂

The water acting as the protic reactant may in this case be present inthe form of a liquid or in gaseous form as water vapor.

Alternatively, hydrochloric acid could for example also be used as theprotic reactant for an aluminum-containing electrically conductivelayer. Salt formation would then for example proceed according to thefollowing scheme:

Al+HCl—>AlCl₃+H₂

If the electrically conductive layer for example comprises sodium, thesodium as a rule forms a salt as follows with water as the proticreactant:

2Na+4H₂O—>2Na (OH)₂+2H₂

If the electrically conductive layer for example comprises silicon, thesilicon as a rule forms a salt as follows with hydrochloric acid as theprotic reactant:

Si+3HCl—>HSiCl₃+H₂

The chemical reaction between the material of the electricallyconductive layer and the protic reactant may generally advantageously beaccelerated by the addition of bases or alkalies. The chemical reactionbetween the material of the electrically conductive layer and the proticreactant may moreover proceed directly in the protic reactant or indeedalso in an aprotic solvent, to which the protic reactant has been addedin a corresponding amount.

According to one embodiment of the method, the protic reactant iscontained in a liquid or a gas or is present as a liquid or as a gas.

For example, the protic reactant is water, an alcohol, a carboxylicacid, a mineral acid, an amine, an amide or a mixture of at least twosuch materials.

The electrophoretically applied conversion layer may comprise pores,through which the protic reactant in liquid or gaseous form, or indeedalso the solvent may reach the electrically conductive layer or the saltformed to wash out the salt. In this way, the chemical reaction mayproceed between the protic reactant and the electrically conductivelayer. Furthermore, the salt formed may also diffuse into the solventfor the purpose of washing out.

BRIEF DESCRIPTION OF THE DRAWINGS

Further advantageous embodiments and further developments of theinvention are revealed by the exemplary embodiments described below inconnection with the figures.

FIGS. 1 and 2 each show a schematic sectional representation of asemiconductor body in each case according to an exemplary embodiment, asmay be provided in the case of a method described here.

A method according to a first exemplary embodiment is explained withreference to the schematic sectional representations of FIGS. 3 to 9.

A method according to a second exemplary embodiment is explained withreference to the schematic sectional representations of FIGS. 10 to 11.

A method according to a third exemplary embodiment is explained withreference to the schematic sectional representations of FIGS. 12 to 19.

Identical, similar or identically acting elements are provided with thesame reference numerals in the figures. The figures and the size ratiosof the elements illustrated in the figures relative to one another arenot to be regarded as being to scale. Rather, individual elements, inparticular layer thicknesses, may be illustrated on an exaggeratedlylarge scale for greater ease of depiction and/or better comprehension.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The semiconductor body 1 according to the exemplary embodiment in FIG. 1comprises a pixel region 2 with three subpixel regions 3. Each subpixelregion 3 comprises a semiconductor layer sequence 4 with an active layer5 which is suitable for generating electromagnetic radiation of a firstwavelength range. In the present case, the active layer 5 is suitablefor producing visible blue light. Each two directly adjacent subpixelregions 3 are separated from one another by a trench 6. Each trench 6passes right through the active layer 5. Furthermore, in the presentcase the trench 6 also passes right through the semiconductor layersequence 4. In this way, the semiconductor layer sequence 4 of eachsubpixel region 3 forms a projection.

The semiconductor body 1 further comprises a carrier element 7 on whichthe pixel region 2 is arranged. Between the carrier element 7 and thesemiconductor layer sequence 4 a specular layer 8 is arranged. Thespecular layer 8 is suitable for reflecting electromagnetic radiationgenerated in the active layer 5 towards a radiation exit face 9 of thesubpixel region 3. Furthermore, the specular layer 8 is electricallyconductive, such that each subpixel region 3 may be electricallycontacted at the back via the carrier element 7. The carrier element 7may for example be an active matrix element of a display.

A passivation layer 10 is applied to the side faces of the semiconductorlayer sequence 4. In the present case, the passivation layer 10completely covers the side faces of the semiconductor layer sequence 4.Furthermore, the passivation layer 10 is also formed in the trenches 6between respectively adjacent subpixel regions 3. The passivation layer10 extends from the radiation exit face 9 on the side face of thesemiconductor layer sequence 4 over the trench 6 and the side face ofthe adjacent subpixel region 3 to the radiation exit face 9 thereof. Thefront, facing the radiation exit face 9, of the semiconductor layersequence 4 of each subpixel region 3 is however free of the passivationlayer 10.

On a major face of the carrier element 7 facing the semiconductor layersequence 4, regions 11 are arranged which are electrically insulating.The electrically insulating regions 11 extend along the major facebetween two directly adjacent subpixel regions 3, while in the region ofa subpixel region 3 they each have a recess 12 which is filled with anelectrically conductive material of the carrier element 7. Theelectrically insulating regions 11 of the carrier element 7, inassociation with the passivation layer 10 on the side faces of thesubpixel regions 3 and in the trenches 6, result in the subpixel regions3 in each case being electrically insulated from one another. Therecesses 12 between the electrically insulating regions 11 result in thesubpixel regions 3 in each case being electrically contacted at theback.

Furthermore, the subpixel regions 3 comprise a transparent electricallyconductive layer 13 on their radiation exit faces 9, via which thesubpixel regions 3 are electrically contacted at the front. Thetransparent electrically conductive layer 13 is here applied over theentire surface of a front of the pixel region 2 which comprises theradiation exit faces 9 of the subpixel regions 3. In the presentexemplary embodiment, the transparent electrically conductive layer 13completely covers the radiation exit faces 9 of the subpixel regions 3and the side faces of the subpixel regions 3.

On the transparent conductive layer 13 metallic conductive tracks 14 arein turn applied in each of the trenches 6 between the subpixel regions3, the tracks 14 serving for external contacting of the subpixel regions3.

It should be noted at this point that, although in the figures in eachcase only one pixel region 2 with three subpixel regions 3 is shown byway of example, the semiconductor body 1 does generally have a pluralityof such pixel regions 2. The pixel regions 2 are here particularlypreferably all of like configuration.

The semiconductor body 1 according to the exemplary embodiment of FIG. 2likewise comprises one pixel region 2 with three different subpixelregions 3. Each subpixel region 3 comprises a semiconductor layersequence 4 with an active layer 5 which is suitable for emittingelectromagnetic radiation of a first wavelength range, preferably bluelight. The subpixel regions 3 are in the present case again separatedfrom one another by trenches 6, wherein the trenches 6 pass rightthrough the active layer 5 and also the semiconductor layer sequence 4.The semiconductor body 1 again comprises a carrier element 7, as alreadydescribed above. The carrier element 7 takes the form of an activematrix element, for example. Such an active matrix element for examplecomprises silicon or is formed of silicon.

As in the exemplary embodiment of FIG. 1, a specular layer 8 which iselectrically conductive is applied between the carrier element 7 and theactive semiconductor layer sequence 4.

In contrast to the semiconductor body 1 according to the exemplaryembodiment of FIG. 1, however, a passivation layer 10 is formed over theentire surface of the front of the semiconductor body 1 according to theexemplary embodiment of FIG. 2. The passivation layer 10 is here formedby an electrically insulating material, such as for example an oxide ora nitride. In the present case, the passivation layer 10 completelycovers the radiation exit face 9 of each subpixel region 3, the sidefaces of each subpixel region 3 and the bottom of the trenches 6 betweenthe subpixel regions 3.

Since, in the case of the semiconductor body 1 according to theexemplary embodiment of FIG. 2, the radiation exit faces 9 of thesubpixel regions 3 are formed by the electrically insulating material ofthe passivation layer 10, these subpixel regions 3 cannot beelectrically contacted via their radiation exit faces 9. For thisreason, a further metallic, electrically conductive layer 8′, which hasa through-via 15 through the active layer 5, is applied between thecarrier element 7 and the specular layer 8. The through-via 15 serves incontacting the semiconductor layer sequence 4 electrically at the front.The further metallic layer 8′ and the through-via 15 are separated fromthe specular layer 8, the active layer 5 and the region of thesemiconductor layer sequence 4 which faces the carrier element 7 by anelectrically insulating layer 16.

In the method according to the first exemplary embodiment of FIGS. 3 to9, a semiconductor body 1 is provided as has already been described indetail with reference to FIG. 1. A photoresist layer 17 is applied overthe entire surface of the front of the semiconductor body 1 (FIG. 3). Byphoto-patterning of the photoresist layer 17, the radiation exit faces 9of two subpixel regions 3 are exposed, while the radiation exit face 9of the third subpixel region 3 is completely covered by the photoresistlayer 17. The trench 6 between the two exposed subpixel regions 3 isalso filled with the photoresist layer 17 (FIG. 4).

In a next step an electrically conductive layer 18 is applied over theentire surface of the front of the semiconductor body 1 (FIG. 5). Theelectrically conductive layer 18 is suitable at least in part forforming a salt with a protic reactant.

In a next step, which is illustrated schematically in FIG. 6, thepatterned photoresist layer 17 is removed. An electrically conductivelayer 18 is then located on the freely accessible radiation exit faces 9of the subpixel regions 3. The radiation exit face 9 of the subpixelregion 3, which was covered with the photoresist layer 17, is on theother hand freely accessible. The side faces of the semiconductor layersequences 4 and the trenches 6 between the subpixel regions 3 are alsofree of the electrically conductive layer 18. In other words, only theradiation exit faces 9 of two subpixel regions 3 are covered with theelectrically conductive layer 18, while the remaining front of the pixelregion 2 is free of the electrically conductive layer 18.

In a next step, a conversion layer 19 is deposited on the electricallyconductive layer 18 of a subpixel region 3 using an electrophoresisprocess (FIG. 7). The conversion layer 19 is in this case suitable forconverting electromagnetic radiation of the first wavelength range intoelectromagnetic radiation of a second wavelength range. The secondwavelength range is here formed of green light. The conversion layer 19is configured such that it converts the electromagnetic radiation, whichis emitted by the radiation exit face 9 of the subpixel region 3, ascompletely as possible into green light.

In the electrophoretic deposition of the conversion layer 19, in thiscase only the subpixel region 3 on which it is intended to apply theconversion layer 19 is supplied with current. In this way, luminescentmaterial particles only attach to this subpixel region 3 during theelectrophoresis process.

In a next step, a further conversion layer 19′ is then applied to thefurther subpixel region 3, whose radiation exit face 9 is covered withan electrically conductive layer 18 (FIG. 8). The further conversionlayer 19′ is suitable for converting electromagnetic radiation of thefirst wavelength range into electromagnetic radiation of a thirdwavelength range, which is different from the first and secondwavelength ranges. The further conversion layer 19′ is particularlypreferably suitable for converting blue light, which is produced in theactive layer, as completely as possible into red light.

In a next step, the material of the electrically conductive layer isthen dissolved out by introducing at least the electrically conductivelayer into the protic reactant, such that the electrically conductivelayer at least in part forms a salt with the protic reactant. In afurther step the salt formed is washed out of the semiconductor chip(FIG. 9). In particular, the salt is removed from a surface of thesemiconductor body 1 by washing out.

In the method according to FIGS. 3 to 9, a semiconductor body 1 is usedwhose subpixel regions 3 may be individually supplied with current. Itis therefore possible to supply current to individual subpixel regions 3in the electrophoresis process and in this way to deposit the conversionlayer 19, 19′ only on the subpixel regions 3 supplied with current. Ifit is not possible or not desired to supply the subpixel regions 3individually with current, then prior to electrophoretic deposition ofthe conversion layer 19, 19′ the region of the front of thesemiconductor body 1 which it is not intended to provide with theconversion layer 19, 19′ is in each case covered with a photoresistlayer 17. Only the region of the front of the semiconductor body 1 to becoated remains freely accessible during the electrophoresis process.

In the method according to the exemplary embodiment of FIGS. 10 and 11,in a first step a semiconductor body 1 is provided, as already describedin detail with reference to FIG. 2 (FIG. 10). In a next step thepassivation layer 10 is removed from the radiation exit face 9 of thesubpixel regions 3 using a photolithographic method. In this way, theradiation exit faces 9 of the subpixel regions 3 are made electricallyconductive (FIG. 11). If the subpixel regions 3 are individuallyenergizable, then, as has already been described in detail withreference to FIGS. 3 to 9, two different conversion layers 19, 19′ areapplied onto the electrically conductive radiation exit faces 9 of twosubpixel regions 3, while the radiation exit face 9 of one subpixelregion 3 remains free of the conversion layers 19, 19′ (not shown).

If it is impossible to supply the subpixel regions 3 individually withcurrent, then only the subpixel regions to be coated are selectivelyexposed in succession and provided in accordance with the methodaccording to FIGS. 3 to 9 in each case with a conversion layer 19, 19′(not shown).

In the method according to the exemplary embodiment of FIGS. 12 to 19 asemiconductor body 1 is likewise provided, as has already been describedin detail with reference to FIG. 2 (see FIG. 12). However, in contrastto the method according to FIGS. 10 and 11, in the case of thissemiconductor body 1 it is intended that the passivation layer 10 beretained completely on the semiconductor body 1.

In a first step, an electrically conductive layer 18 which is suitableat least in part for forming a salt with a protic reactant is appliedover the entire surface of the front of the semiconductor body 1, whichfront comprises the radiation exit faces 9 of the subpixel regions 3(FIG. 13).

A patterned photoresist layer 17′ is then applied onto the electricallyconductive layer 18. The photoresist layer 17′ covers two subpixelregions 3, while the electrically conductive layer 18 is freelyaccessible in a further subpixel region 3 (FIG. 14).

A conversion layer 19 is then deposited using an electrophoresis processin the region in which the electrically conductive layer 18 is freelyaccessible (FIG. 15). For the electrophoresis process, the electricallyconductive layer 18 is in each case contacted laterally of thesemiconductor body 1 (not shown).

In a next step the photoresist layer 17′ is removed again (FIG. 16). Onthe radiation exit face 9 of one of the subpixel regions 3, a conversionlayer 19 is then arranged, while the other subpixel regions 3 are freeof the conversion layer 19 (FIG. 16).

A patterned photoresist layer 17′ is then applied again, which coversthe conversion layer 19 already applied and one of the directly adjacentsubpixel regions 3. Only one subpixel region 3 is freely accessible(FIG. 16).

Then an electrophoresis process is again carried out, to deposit afurther conversion layer 19′ on the electrically conductive layer 18over the radiation exit face 9 of the freely accessible subpixel region3 (FIG. 18).

In a further step, the photoresist layer 17′ is firstly removed and thenthe semiconductor body 1 is introduced into a protic reactant, such thatthe electrically conductive layer 18 is also converted into a salt andthen washed out (FIG. 19).

The description made with reference to exemplary embodiments does notrestrict the invention to these embodiments. Rather, the inventionencompasses any novel feature and any combination of features, includingin particular any combination of features in the claims, even if thisfeature or this combination is not itself explicitly indicated in theclaims or exemplary embodiments.

1-15. (canceled)
 16. A method for producing an optoelectronicsemiconductor chip, the method comprising: providing a semiconductorbody with a pixel region comprising different subpixel regions, eachsubpixel region having a radiation exit face; applying an electricallyconductive layer onto the radiation exit face of a subpixel region,wherein the electrically conductive layer is suitable at least in partfor forming a salt with a protic reactant; and depositing a conversionlayer on the electrically conductive layer using an electrophoresisprocess.
 17. The method according to claim 16, wherein the subpixelregions are electrically insulated from one another and each subpixelregion comprises an active layer that is suitable for emittingelectromagnetic radiation of a first wavelength range.
 18. The methodaccording to claim 17, wherein the radiation exit face of each subpixelregion is located at a front surface of the semiconductor body; theradiation exit face of each subpixel region is electrically conductive;the electrically conductive layer is applied over the entire frontsurface of the semiconductor body; and a photoresist layer is appliedonto the electrically conductive layer in at least one subpixel region,while the electrically conductive layer is freely accessible in afurther subpixel region.
 19. The method according to claim 18, whereinthe electrically conductive layer is electrically contacted laterallyduring the electrophoresis process.
 20. The method according to claim17, wherein the radiation exit face of each subpixel region is locatedat a front surface of the semiconductor body; the radiation exit face ofeach subpixel region is formed by a passivation layer; the electricallyconductive layer is applied over the entire front surface of thesemiconductor body; and a photoresist layer is applied onto theelectrically conductive layer in at least one subpixel region, while theelectrically conductive layer is freely accessible in a further subpixelregion.
 21. The method according to claim 17, wherein a radiation exitface of each subpixel region is formed by a passivation layer; and thepassivation layer is removed from the radiation exit face of at leastone subpixel region, such that the radiation exit face of the subpixelregion is made electrically conductive, while the passivation layer isretained in at least one subpixel region.
 22. The method according toclaim 21, wherein the passivation layer is removed in a further subpixelregion, such that the radiation exit face of the further subpixel regionis made electrically conductive; the electrically conductive layer isapplied onto the radiation exit face of the further subpixel region; anda further conversion layer is deposited on the electrically conductivelayer using an electrophoresis process.
 23. The method according toclaim 16, wherein the radiation exit face of each subpixel region iselectrically conductive; and wherein using the electrophoresis processcomprises supplying current to the subpixel region onto which theconversion layer is applied, the current being supplied independently ofanother subpixel region.
 24. The method according to claim 23, whereinthe electrically conductive radiation exit face of the subpixel regionsis formed by a transparent electrically conductive layer, whichcomprises a TCO material.
 25. The method according to claim 23, whereinthe electrically conductive radiation exit face is produced by removalof a passivation layer overlying the subpixel region.
 26. The methodaccording to claim 16, wherein the pixel region comprises preciselythree subpixel regions; wherein a first subpixel region remains free ofa conversion layer; wherein a second subpixel region is provided withthe conversion layer, the conversion layer being suitable for convertingradiation of a first wavelength range into radiation of a secondwavelength range; and wherein a third subpixel region is provided with afurther conversion layer, the further conversion layer being suitablefor converting radiation of the first wavelength range into radiation ofa third wavelength range different from the first and second wavelengthranges.
 27. The method according to claim 26, wherein the firstwavelength range comprises blue light, the second wavelength rangecomprises green light and the third wavelength range comprises redlight.
 28. The method according to claim 16, wherein the electricallyconductive layer is introduced into the protic reactant, such that theelectrically conductive layer at least in part forms a salt with theprotic reactant.
 29. The method according to claim 28, wherein at leastpart of the salt is washed out of the optoelectronic semiconductor chip.30. The method according to claim 16, wherein the electricallyconductive layer comprises a material selected from the group consistingof lithium, sodium, potassium, rubidium, caesium, beryllium, calcium,magnesium, strontium, barium, scandium, titanium, aluminum, silicon,gallium, tin, zirconium, zinc oxide, zinc sulfide, zinc selenide, zinctelluride or tin oxide.
 31. The method according to claim 16, whereinthe deposited conversion layer comprises pores.
 32. A method forproducing an optoelectronic semiconductor chip, the method comprising:providing a semiconductor body with a pixel region comprising aplurality of different subpixel regions, each subpixel region having aradiation exit face; applying an electrically conductive layer onto theradiation exit face of at least one subpixel region, wherein theelectrically conductive layer is suitable at least in part for forming asalt with a protic reactant; depositing a conversion layer on theelectrically conductive layer using an electrophoresis process, whereinthe deposited conversion layer comprises pores; and introducing of theprotic reactant in fluid or gaseous form through the pores, such thatthe electrically conductive layer forms at least partially a salt withthe protic reactant.